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High Voltage IGBTs w/Diode
IXGH40N120B2D1 IXGT40N120B2D1
VCES = IC110 = VCE(sat) tfi(typ) =
1200V 40A 3.5V 140ns
TO-247 (IXGH)
Symbol
VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions
TC = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C (Limited by Lead) TC = 110C TC = 110C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 2 Clamped Inductive Load TC = 25C
Maximum Ratings
1200 1200 20 30 75 40 25 200 ICM = 80 @ 0.8 VCES 380 -55 ... +150 150 -55 ... +150 V V V V A A A A A V W C C C C C Nm/lb.in. g g Features International Standard Packages IGBT and Anti-Parallel FRED for Resonant Power Supplies - Induction Heating - Rice Cookers Square RBSOA Fast Recovery Expitaxial Diode (FRED) - Soft Recovery with Low IRM Advantages High Power Density Low Gate Drive Requirement G = Gate E = Emitter G C C (TAB)
E
TO-268 (IXGT)
G
E C (TAB) C = Collector TAB = Collector
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268
300 260 1.13/10 6 4
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified)
VGE(th) ICES IGES VCE(sat) IC = 250A, VCE = VGE VCE = VCES, VGE = 0V
Characteristic Values Min. Typ. Max.
3.0 TJ = 125C 5.0 100 3 100 2.9 3.5 V A mA nA V
VCE = 0V, VGE = 20V IC = 40A, VGE = 15V, Note 1
(c) 2009 IXYS CORPORATION, All RrightsRreserved
DS99555B(02/09)
IXGH40N120B2D1 IXGT40N120B2D1
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified)
gfS Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS 0.21 Inductive load, TJ = 125C IC = 40A, VGE = 15V VCE = 960V, RG = 2 Inductive load, TJ = 25C IC = 40A, VGE = 15V VCE = 960V, RG = 2 IC = 40A, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1MHz IC = 40A, VCE = 10V, Note 1
Characteristic Values Min. Typ. Max.
23 37 3360 190 63 138 20 48 21 55 4.5 290 140 3.0 21 58 6.5 350 420 8.3 0.33 270 6.0 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ C/W C/W
TO-247 (IXGH) Outline
1
2
3
P
e
Terminals: 1 - Gate 3 - Source
2 - Drain Tab - Drain
Dim.
Note 2
Note 2
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 (IXGT) Outline
Reverse Diode (FRED) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VF IRM trr RthJC IF = 30A, VGE = 0V TJ = 150C IF = 30A, -di/dt = 100A/s, VR = 300V,VGE = 0V TJ = 100C TJ = 100C 100 1.6 4 Characteristic Values Min. Typ. Max. 2.8 V V A ns 0.9 C/W
Note 1: Pulse Test, t 300s, Duty Cycle, d 2%. 2. Switching Times may Increase for VCE (Clamp) > 0.8 * VCES, Higher TJ or Increased RG.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGH40N120B2D1 IXGT40N120B2D1
Fig. 1. Output Characteristics @ 25C
80 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 7V 9V VGE = 15V 13V 11V 250 225 200 175 11V VGE = 15V 13V
Fig. 2. Extended Output Characteristics @ 25C
IC - Amperes
IC - Amperes
150 125 100 75 50 25 0 0 2 4 6 8 10 12 14 16 18 20 7V 9V
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ 125C
80 70 60 VGE = 15V 13V 11V 1.6 1.5 1.4
Fig. 4. Dependence of VCE(sat) on Junction Temperature
VGE = 15V I 1.3 1.2 1.1 1.0 0.9 0.8 I
C C
IC - Amperes
50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
9V
7V
VCE(sat) - Normalized
= 80A
= 40A
5V
0.7 0.6 4.0 4.5 -50 -25 0 25
I
C
= 20A 75 100 125 150
50
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
7 TJ = 25C 6 I
C
Fig. 6. Input Admittance
120
100 = 80A 40A 20A
5
IC - Amperes
80
VCE - Volts
60
4
40 3
20
TJ = 125C 25C - 40C
2 5 6 7 8 9 10 11 12 13 14 15
0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
VGE - Volts
VGE - Volts
(c) 2009 IXYS CORPORATION, All RrightsRreserved
IXGH40N120B2D1 IXGT40N120B2D1
Fig. 7. Transconductance
55 50 45 40 25C 125C 12 TJ = - 40C 16 14 VCE = 600V I C = 40A I G = 10 mA
Fig. 8. Gate Charge
g f s - Siemens
30 25 20 15 10 5 0 0 10 20 30 40 50 60 70
VGE - Volts
90 100 110 120
35
10 8 6 4 2 0
80
0
20
40
60
80
100
120
140
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
10,000 90
Fig. 10. Reverse-Bias Safe Operating Area
f = 1 MHz Capacitance - PicoFarads
Cies
80 70
IC - Amperes
1,000
60 50 40 30
Coes
100 Cres
20 10
TJ = 125C RG = 2 dV / dt < 10V / ns
10 0 5 10 15 20 25 30 35 40
0 200
300
400
500
600
700
800
900
1000 1100 1200
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z(th)JC - C / W
0.10
0.01 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS REF: G_40N120B2(6ZC) 3-30-06
IXGH40N120B2D1 IXGT40N120B2D1
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
18 I 16
C
Fig. 13. Inductive Switching Energy Loss vs. Junction Temperature
16 Eoff 14 VCE = 960V Eon
= 80A
----
RG = 2 , VGE = 15V
I
C
= 80A
Eoff / Eon - MilliJoules
Eoff 12 10 8 6 4 VCE = 960V
Eon -
---
TJ = 125C , VGE = 15V
Eoff / Eon - MilliJoules
14
12 10 8 6 4 2
I
C
= 40A
I
C
= 40A
I
I 2 2 3 4 5 6
C
= 20A 0 8 9 10 25 35 45 55 65 75
C
= 20A
7
85
95
105
115
125
RG - Ohms
TJ - Degrees Centigrade
Fig. 14. Inductive Switching Energy Loss vs. Collector Current
16 14 Eoff VCE = 960V Eon 500 480 TJ = 125C 460
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance tf
VCE = 960V
td(off) - - - I
C
620 = 80A, 40A, 20V 580 540
----
TJ = 125C, VGE = 15V
RG = 2 , VGE = 15V
Eoff / Eon - MilliJoules
12 10 8 6 4 2 0 20
t d(off) - Nanoseconds
t f - Nanoseconds
440 420 400 380 360 340 320 I C = 80A, 40A, 20V
500 460 420 380 340 300 260 2 3 4 5 6 7 8 9 10
TJ = 25C
25
30
35
40
45
50
55
60
65
70
75
80
IC - Amperes
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Junction Temperature
500 450
Fig. 17. Inductive Turn-off Switching Times vs. Collector Current
480 440 400 460 440
tf
450 400
td(off) - - - 420 390 = 20A, 40A, 80A 360 330 300 I C = 20A, 80A 270 240 210 125
RG = 2 , VGE = 15V VCE = 960V I
C
tf
TJ = 125C VCE = 960V
td(off) - - - -
420
t d(off) - Nanoseconds
t
t f - Nanoseconds
350 300 250 200 150 100 25 35
t f - Nanoseconds
360 320 280 240 200 160 120 80 20 25
RG = 2 , VGE = 15V
400 380 360 340 320 300
d(off)
- Nanoseconds
TJ = 25C 30 35 40 45 50 55 60 65 70 75 80
280 260
45
55
65
75
85
95
105
115
TJ - Degrees Centigrade
IC - Amperes
(c) 2009 IXYS CORPORATION, All RrightsRreserved
IXGH40N120B2D1 IXGT40N120B2D1
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
130 120 110 I
C
Fig. 19. Inductive Turn-on Switching Times vs. Junction Temperature
30 29 120 110 100 I C = 80A 23 24
= 80A
28
t r - Nanoseconds
90 80 70 60 50 40 30 20 2
TJ = 125C, VGE = 15V VCE = 960V I
C
26 = 40A 25 24 23 22 21 I
C
t r - Nanoseconds
100
tr
td(on) - - - -
27
t d(on) - Nanoseconds
90 80 70 60 50 40 30 20 25
tr
VCE = 960V
td(on) - - - 22 I C = 40A 21
t d(on) - Nanoseconds
RG = 2 , VGE = 15V
20 I C = 20A 35 45 55 65 75 85 95 105 115
= 20A
20 19 10
3
4
5
6
7
8
9
19 125
RG - Ohms
TJ - Degrees Centigrade
Fig. 20. Inductive Turn-on Switching Times vs. Collector Current
120 110 100 24
tr
td(on) - - - 23
t r - Nanoseconds
90 80 70 60 50 40 30 20 20
RG = 2 , VGE = 15V 25C < TJ < 125C VCE = 960V
t d(on) - Nanoseconds
22
21
20
19 25 30 35 40 45 50 55 60 65 70 75 80
IC - Amperes
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS REF: G_40N120B2(6ZC) 3-30-06
IXGH40N120B2D1 IXGT40N120B2D1
60 A 50 IF 40 1000 nC V = 300V R 800 Qr
TVJ= 100C IF= 60A IF= 30A IF= 15A
IRM
30 A 25 20 15
TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A
TVJ=150C
30 20
600
TVJ=100C TVJ=25C
400 10 200 5 0
10 0
0
1
2 VF
3V
0 100
A/s 1000 -diF /dt
0
200
400
600 A/s 800 -diF /dt
1000
Fig. 21. Forward current IF versus VF
2.0
Fig. 22. Reverse recovery charge Qr versus -diF/dt
90 ns
Fig. 23. Peak reverse current IRM versus -diF/dt
20 V V FR 15
TVJ= 100C VR = 300V
TVJ= 100C IF = 30A VFR tfr
1.00 tfr 0.75 s
1.5 Kf 1.0
trr 80
IRM
70 0.5
IF= 60A IF= 30A IF= 15A
10
0.50
5
0.25
Qr
0.0 60 0 0.00 600 A/s 1000 800 diF /dt
0
40
80
120 C 160 T VJ
0
200
400
600 -diF /dt
800 A/s
1000
0
200
400
Fig. 24. Dynamic parameters Qr, IRM versus TVJ
1 K/W
Fig. 25. Recovery time trr versus -diF/dt
Fig. 26. Peak forward voltage VFR and tfr versus diF/dt
Constants for ZthJC calculation i Rth ( C/W) 0.465 0.179 0.256 ti (s) 0.0052 0.0003 0.0397
0.1 Z thJC
1 2 3
0.01
0.001 0.00001
DSEP 29-06
0.0001
0.001
0.01
0.1
t
s
1
Fig. 27. Transient thermal resistance junction to case
(c) 2009 IXYS CORPORATION, All RrightsRreserved

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